| 摘要 |
PROBLEM TO BE SOLVED: To provide cleaning equipment and a cleaning method where polishing slurry and microscratches are not left, in a cleaning process after chemical- mechanism polishing. SOLUTION: A semiconductor substrate 12 is rotated, a roll brush 20 is rotated while cleaning chemical solution on which ultrasonic waves are superposed is supplied from the roll brush 20 to the semiconductor substrate 12, and polishing slurry is removed. After that, hydrofluoric acid based etching chemical solution is supplied to the semiconductor substrate while a disk brush is pressed against the surface of the semiconductor substrate and rotated in another chamber, and an oxide film formed on the surface is etched, thereby eliminating microscratches.
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