发明名称 NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory in which decoder part area overhead of a nonvolatile semiconductor memory provided with a plurality of banks and a page read function is suppressed and a chip cost can be reduced. SOLUTION: Data line 3 for read and data line 4 for write/verifying connected to a bit line 5 of a first nonvolatile memory bank 1 and a bit line 6 of a second nonvolatile memory bank 2 respectively and selectively are provided at a region between a first and a second nonvolatile memory banks 1, 2, and the first and the second nonvolatile memory banks 1, 2 share the data lines 3 for read and the data line 4 for write/verifying. By using such constitution, as the first nonvolatile memory bank and the second nonvolatile memory bank can share data lines, pattern occupancy area can be reduced.</p>
申请公布号 JP2003077284(A) 申请公布日期 2003.03.14
申请号 JP20010265022 申请日期 2001.08.31
申请人 TOSHIBA CORP 发明人 TANZAWA TORU;ATSUMI SHIGERU;UMEZAWA AKIRA;TAURA TADAYUKI;SHIGA HITOSHI;TAKANO YOSHINORI
分类号 G11C16/06;G11C16/00;G11C16/04;G11C16/08;G11C16/26;G11C29/00;G11C29/04;(IPC1-7):G11C16/06 主分类号 G11C16/06
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