发明名称 LAMINATION STRUCTURE OF SEMICONDUCTOR MODULE SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To improve inter-layer matching, joint strength, and heat-radiation characteristics, etc., of a semiconductor element module substrate. SOLUTION: There are provided a circuit board (10) in which an aluminum layer (12a) and a copper layer (13) are laminated on the side of a ceramics plate (11), on which an element is mounted while an aluminum layer (12b) (on which a copper layer 13b may be laminated) is formed on the rear surface; and a heatsink (20) which comprises a composite layer (the mixture of ceramics and high heat-conductivity metal such as Al, Cu, and Mg) (21), and a fin (22) comprising the same kind of high heat-conductive metal as the metal of composite layer (the same kind of metal layer 23 may be provided on the front surface of the composite layer 21). The ceramics plate (11) of the circuit board is directly jointed to the aluminum layers (12a) and (12b) with no brazing metal, etc., interposed at the interface. The composite layer (21), the fin (22), and a metal layer (23) of the heatsink (20) are integrally molded with no interface. Barrier layers (14a) and (14b) of Ni, etc., may be provided between the aluminum layer and the copper layer of the circuit board.
申请公布号 JP2003078086(A) 申请公布日期 2003.03.14
申请号 JP20010267339 申请日期 2001.09.04
申请人 KUBOTA CORP;NIPPON HYBRID TECHNOLOGIES KK 发明人 SHIN YOSHIYUKI;SUGAI ATSUSHI;ASANO SOICHI;OKANO HIROAKI;FUNAKOSHI ATSUSHI;ESASHI KIYOYUKI
分类号 H01L23/12;H01L23/14;H01L23/15;H01L23/373;(IPC1-7):H01L23/373 主分类号 H01L23/12
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