QUANTUM EFFECT ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide such a quantum effect element that is extremely small in element occupation area and low in power consumption. SOLUTION: A silicon island 11a is formed in a quantum thin line 11 made of silicon while it is pinched by a pair of tunnel barriers 12 made of silicon oxide film. A gate electrode 14 for controlling potential is provided on the side of the silicon island 11a with a gate insulation film 13 made of interposed silicon oxide film, and a control electrode 16 for controlling potential is provided on the other side thereof with an insulation film 15 made of interposed silicon oxide film. The tunnel barrier 12 has such a quantum thin line constriction structure that a silicon oxide film 17 as an electric boundary supporting oxide film formed using an interatomic force microscope or the like is formed by oxidizing the quantum thin line from its surface to its nearly central part.