发明名称 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a card storage device with a built-in non-volatile memory for shortening the required writing time and preventing the early deterioration of rewriting durability. SOLUTION: The card storage device in which the non-volatile memory and an error correcting circuit are built, reads written data out of the non- volatile memory when there is a write error in the non-volatile memory and determines whether the error can be corrected or not by the error correcting circuit. If the error can be corrected, writing operation is completed as it is, and if it cannot be corrected by the error correcting circuit, alternate processing is done for writing the written data into another region.
申请公布号 JP2003076615(A) 申请公布日期 2003.03.14
申请号 JP20010270013 申请日期 2001.09.06
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 KANAMORI SAKAKI;KATAYAMA KUNIHIRO;SHIRAISHI ATSUSHI;KURAKATA SHIGEO;YOMO JUNJI
分类号 G06F12/16;G06F11/00;G06F11/10;G11C16/06;G11C29/00;G11C29/42 主分类号 G06F12/16
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