发明名称 METHOD OF SIMULATING DEVELOPING RATE OF CHEMICAL AMPLIFICATION TYPE RESIST
摘要 PROBLEM TO BE SOLVED: To provide a method of simulating a chemical amplification type resist, which fully improves the accuracy thereof to be effective in the practical use, even for patterns having line widths of 100 nm or less. SOLUTION: The diffusion of an acid is simulated on the assumption that the diffusion factor of the acid depends on the concentration of the acid.
申请公布号 JP2003077811(A) 申请公布日期 2003.03.14
申请号 JP20010268176 申请日期 2001.09.05
申请人 NIKON CORP 发明人 RI ENSHU;YAMADA ATSUSHI
分类号 G03F7/039;G03F7/26;G06F17/13;G06F19/00;H01L21/027 主分类号 G03F7/039
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