| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a flash memory in which increase of chip area can be suppressed and high speed operation can be performed. SOLUTION: In this semiconductor memory, the number of main bit lines 16 and the number of main bit lines 17 are made equal respectively for two kinds of memory sub-arrays of which an erasure unit or a write unit is different, and the number of main work lines 14 are changed respectively. By this constitution, even if a double work line system and a double bit line system are adopted, since the degree of freedom of layout is high, increment of chip area can be suppressed by efficiently arranging peripheral circuits, and high speed operation can be performed.</p> |
