REDUNDANCY CIRCUIT AND METHOD FOR FLASH MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To improve a redundancy technique of a non-volatile memory device. SOLUTION: The technique is disclosed for replacing defective columns of flash memory cells in a flash memory device. The circuit includes a plurality of sets of storage elements, each set of storage elements are capable of identifying at least one column of memory cells in any block of memory cells as being defective. The circuit further includes control circuitry for replacing an addressed column of memory cells with a redundant column of memory cells upon an affirmative determination that a set of storage elements identify the addressed column of memory cells as being defective.