发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can reduce the generation of particles, extend the maintenance period of a reaction pipe and surely supply source gas to the surface of a substrate. SOLUTION: In this apparatus, an O-ring 18 is provided between the reaction pipe 3 and a cover 25, a gas supply section 21 is attached to the reaction pipe 3, a gas inlet pipe 22 is connected to the gas supply section 21, and a barrier 26 forming the lower part of the reaction pipe 3 is provided within the gas supply section 21. The barrier 26 is located between the inside or reaction pipe 3 and the gas inlet pipe 22, an annular type supply gas route 23 connected to the gas supply section 21 is provided at the lower part of the reaction pipe 3; a plurality of in-furnace inlet slits 24 are provided radially at the same pitch at the lower part of the barrier 26; the supply gas route 23 is connected to the inside of reaction pipe 3 with the in-furnace introducing slits; and the carrier gas supplied from the gas inlet pipe 22 is returned at the end part of the barrier 26 and then introduced into the reaction pipe 3, after it flows toward the O-ring 18 along the barrier 26.
申请公布号 JP2003077850(A) 申请公布日期 2003.03.14
申请号 JP20010269681 申请日期 2001.09.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIYAMA TOMOSHI
分类号 H01L21/22;(IPC1-7):H01L21/22 主分类号 H01L21/22
代理机构 代理人
主权项
地址