| 摘要 |
PROBLEM TO BE SOLVED: To provide a GaN semiconductor layer which is made stable in a vertical lateral mode by improving it in light trapping properties. SOLUTION: An N-Al0.07 Ga0.93 N first clad layer, an active layer, and a P- Al0.07 Ga0.93 N second clad layer, are laminated on a substrate. Furthermore, an AlGaN layer whose Al composition is higher than (or equal to) that of the first clad layer is interposed between the first clad layer and the substrate, by which the active layer can be improved in light trapping properties, and cracking is restrained from occurring in crystals.
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