| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory in which occurrence of cross talk between adjacent signal lines can be prevented effectively when a plurality of signal lines are arranged in parallel. SOLUTION: When a bit line BL- 2 is selected out of bit lines BL- 1, BL- 2, BL- 3 arranged in parallel in a SRAM, a transistor Tr- 2 is turned on and transistors Tr- 1, Tr- 3 are turned off based on column selecting signals CSL- 1, CSL- 2, CSL- 3. Also a transistor Tr- 12 is turned off and transistors Tr- 11, Tr- 13 are turned on. Thereby, potentials of the bit lines BL- 1, BL- 3 are held forcedly at a ground level, in transmission of electric charges through the bit lines BL- 2I, influence exerted by cross talk on the bit lines BL- 1, BL- 3 can be prevented.
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