| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film magnetic substance storage device preventing data from being written in non-selected memory cells. SOLUTION: An memory array 10 is divided into a plurality of memory cell blocks 50 with m rows and n columns. A write digit line WDL is divided for each memory cell line independently for each memory cell block. Each write digit line WDL is selectively activated hierarchically with the write digit lines WDL according to the information transmitted by a main word line MWL and a segment decode line SGDL arranged in common to a plurality of sub- blocks adjacent in the direction of rows. Since a data write current in the direction of row is made to flow only in the write digit line corresponding to a selected memory cell block, erroneous write of data in an unselected memory cell can be prevented. |
