| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method for making an etching rate and an etching selection rate with respect to an organic Si low dielectric constant film to be high and etching a SiC part when the SiC part of a body to be processed is etched by the plasma of etching gas with the organic Si low dielectric constant film as a mask. SOLUTION: In structure having the SiC film 61 and the organic Si low dielectric constant film 62 which is formed on the film, gas including CH2 F2 or gas including CH3 F is used as etching gas when the SiC film 61 is etched by the plasma of etching gas with the organic Si low dielectric constant film 62 as the mask.
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