| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a capacitor having sufficient capacitance as a storage element even if a semiconductor device is reduced and the opening size of a groove in a storage element capacitor becomes small. SOLUTION: A conductive layer for preventing stepped cut constituted of polycrystalline silicon 43b is previously disposed on the base of a semispherical silicon 44b. Thus, a surface area multiplication factor 1.8 is secured and a stepped cut at a lower electrode can be avoided even if large semispherical silicon balls 44b are formed. |
