METHOD FOR CIRCUIT SIMULATION

摘要

PROBLEM TO BE SOLVED: To simulate in a short time and with accuracy by a transistor size reflecting variations in a manufacturing process. SOLUTION: In a model for circuit simulation, a model parameter with a rage of usefulness of the transistor size, parameters for correction 1 representing an amount of change of the transistor size due to the variations in the manufacturing process and a range of an n-type MOS transistor are divided into two ranges, and a first model parameter set 3 used for a range of usefulness 2 of a first transistor and a second model parameter set 5 used for a range of usefulness 4 of a second transistor size are described. The ranges of usefulness 2 and 4 are organized in such a manner as to automatically change the transistor size by setting the amount of change in a manufactured transistor size against a designed value to the parameters for correction 1.