| 摘要 |
PROBLEM TO BE SOLVED: To improve pattern accuracy of a semiconductor integrated circuit device. SOLUTION: In the case of replacing a normal photomask with a resist mask, in setting of a plane dimension of a light shielding pattern 2 composed of a resist film, correction of subtracting a correction amount L from the plane dimension of the light shielding pattern 2 composed of a metal corresponding to it is performed. Inversely, in the case of replacing the resist mask with a normal mask, in the setting of the plane dimension of the light shielding pattern 2 composed of the metal, the correction of adding the correction amount L to the plane dimension of the light shielding pattern 3 composed of the resist film corresponding to it is performed. |
