ION IMPLANTATION EQUIPMENT AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING SAME

摘要

PROBLEM TO BE SOLVED: To provide an ion implantation equipment which operates stably for a long period of time by preventing lowering of creepage resistance due to conductive deposit accreted on the inner face of an insulation bushing. SOLUTION: A continuous groove without break is cut outward (atmosphere side) along the circumference on the inside face of an insulation bushing 11 in a way to divide an ion beam generation chamber flange 6 and an ion source support section flange 5. Since no reaction product is deposited in the groove section 7 due to this arrangement, a short-circuiting caused by surface creepage between the ion beam generation chamber flange 6 and the ion source support section flange 5 is prevented.