| 摘要 |
PROBLEM TO BE SOLVED: To increase a drive current of a field effect transistor by utilizing a substrate bias effect without using a DTMOS in which a gate current flows at an on time. SOLUTION: A semiconductor device comprises a first conductivity type deep well region 121 formed on a semiconductor substrate 111, a second conductivity type shallow well region 123 formed on the deep well region, a semiconductor film formed on the shallow region via a first insulating film 142, a gate electrode 143 formed on the semiconductor film via a second insulating film 141, and an element isolation region 131 having a deeper depth than the depth of a junction between the deep well region and the shallow well region. A channel region 161 is formed on a part covered with a gate electrode of the semiconductor film, a first conductivity type source region 151 and drain region 152 are formed on a part not covered with a gate electrode, and the shallow well region is electrically connected to the gate electrode.
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