| 摘要 |
PROBLEM TO BE SOLVED: To stably supply an AlGaAs epitaxial wafer for a light emitting diode having a higher luminous intensity and the light emitting diode. SOLUTION: In an SH structure AlGaAs epitaxial wafer for the light emitting diode, a carrier density Cl of a p-type GaAs substrate 1 and a carrier density C2 of a p-type AlGaAs activ layer are decided to have a relation of C1/C2>=15. |
