METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which the diffusion of impurity in an impurity area and a gate electrode is suppressed to prevent the variance of short channel effect and threshold voltage. SOLUTION: This method for manufacturing a semiconductor device includes a step for forming a gate electrode 7 on a p-type semiconductor substrate 1 with a silicon oxide film 5 as a gate insulation film, a step for introducing nitrogen to the gate electrode 7 and an n-well area 4, and a step for injecting a p-type impurity (boron) to the n-well area 4 of the p-type semiconductor substrate 1 while the gate electrode 7 is used as a mask and forming a p-type low-concentration diffusion layer 11 as a result.