| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile solid-state memory device and a memory using magnetic resistance effect, and its recording and reproducing method. SOLUTION: A memory device comprises a first magnetic layer and a second magnetic layer of which the direction of magnetization of a film are perpendicular to a substrate, a magnetic resistive element in which a non-magnetic layer is laminated between them, bit lines provided on an upper part of them, a write line varying the magnetization direction of the first magnetic layer and the second magnetic layer by a current, and field effect transistors, and a magnetic resistive element is formed directly over a drain region of the transistor, four write lines are provided at a position holding the magnetic resistive element between them upper and lower two lines by two lines, and a magnetization state of magnetic resistive element is varied by a current magnetic field of a write line. In a recording and reproducing method, the magnetization direction of the first magnetic layer is initialized in the prescribed direction, a current is made to flow in the write line, the magnetization direction of the second magnetic layer of the magnetic resistive element is decided and information is recorded, an absolute value of resistance of the magnetic resistance element is detected, and recorded information is reproduced.
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