| 摘要 |
PROBLEM TO BE SOLVED: To enable a silicon oxide film to be completely buried in a recess for isolating the interval between an adjacent pair of conductive layers, and to enable a re-flow processing of this silicon oxide film to be eliminated. SOLUTION: The semiconductor device, where an insulator is buried in the interval 13 between word lines for isolating the interval of a plurality of word lines 5A, 5B provided on a field oxide film 3, comprises an insulating structure which consists of a silicon nitride film 15 provided on the field oxide film 3 so as to cover an inside wall and a bottom of this interval 13 between word lines, and the word lines 5A, 5B, an oxide film 17 on the surface of the silicon nitride film 15 at least formed in the interval 13 of word lines between these word lines 5A, 5B by subjecting the surface of this silicon nitride film 15 to a thermal oxidation processing or an oxidation processing, and the silicon oxide film 19 buried in the interval 13 of word lines having this oxide film 17. |
