发明名称 Capacitor and method for forming a capacitor
摘要 The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The inner part of the lower electrode can be formed by depositing Ru or Ir with an electro plating process. It is possible to improve the leakage current characteristics by forming the surface of the lower electrode with Pt. Also it is possible to perform a thermal treatment at a high temperature in an oxygen atmosphere, because the inner part of the lower electrode resists or prevents diffusion of oxygen, so that a high dielectric layer can be obtained.
申请公布号 US2003048593(A1) 申请公布日期 2003.03.13
申请号 US20020236311 申请日期 2002.09.06
申请人 HONG KWON 发明人 HONG KWON
分类号 H01L27/105;H01L21/02;(IPC1-7):H01G4/005 主分类号 H01L27/105
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