| 摘要 |
An SOI layer (4) is provided in a buried oxide film (2) and a source (51) and a drain (52) are provided on the upper surface of the SOI layer (4) so that they are kept from contact with the buried oxide film (2). A depletion layer (90) formed by the source (51), the drain (52), and the SOI layer (4) extends to reach the buried oxide film (2), so parasitic capacitance is reduced. This structure achieves an SOIMOS transistor capable of reducing junction capacitance at low drain voltage.
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