发明名称 |
Nonvolatile semiconductor memory device, fabricating method thereof and operation method thereof |
摘要 |
A nonvolatile semiconductor memory device has a cell which includes a drain diffusion region and a source diffusion region formed on a surface layer of a semiconductor substrate; a first insulating film formed between the source diffusion region and the drain diffusion region; a floating gate formed on the first insulating film; a second insulating film formed on the floating gate; a first control gate formed on the second insulating film; a third insulating film formed on the first control gate and a sidewall thereof and on a sidewall of the floating gate; and a second control gate formed on the first control gate with the third insulating film interposed therebetween.
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申请公布号 |
US2003047774(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020230369 |
申请日期 |
2002.08.29 |
申请人 |
SUGITA YASUHIRO;YAMAUCHI YOSHIMITSU |
发明人 |
SUGITA YASUHIRO;YAMAUCHI YOSHIMITSU |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L29/76 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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