发明名称 REDUCTION OF ELECTROSTATIC CHARGE ON A SUBSTRATE DURING PECVD PROCESS
摘要 Provided herein is a method of reducing an electrostatic charge on a substrate during a plasma enhanced chemical vapor deposition process, comprising the step of depositing a conductive layer onto a top surface of a susceptor support plate disposed within a deposition chamber wherein the conductive layer dissipates the electrostatic charge on the bottom surface of the substrate during a plasma enhanced chemical vapor deposition process. Also provided are a method of depositing a thin film during a plasma enhanced chemical vapor deposition process using the methods disclosed herein and a conductive susceptor.
申请公布号 WO03021003(A1) 申请公布日期 2003.03.13
申请号 WO2002US23848 申请日期 2002.07.26
申请人 APPLIED MATERIALS, INC. 发明人 WON, TAE, KYUNG;CHOI, SOO, YOUNG;TAKEHARA, TAKAKO;HARSHBARGER, WILLIAM, R.
分类号 C23C16/458 主分类号 C23C16/458
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