发明名称 |
Nonvolatile semiconductor memory device and method of manufacturing the same |
摘要 |
Using a rapid thermal oxidation device, the top and side surfaces of a floating gate electrode are oxidized by In Situ Steam Generation (ISSG), wherein oxygen to which about 0.5 to 33% hydrogen has been added is introduced directly into a chamber with a temperature of approximately 900 to 1100° C. and a pressure of approximately 1,000 to 2,000 Pa, in order to generate water vapor from the introduced hydrogen and oxygen on a heated semiconductor substrate. Thus, an insulating film made of silicon oxide is formed on the surface of the floating gate electrode.
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申请公布号 |
US2003047775(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020238636 |
申请日期 |
2002.09.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FUJIMOTO HIROMASA;NORO FUMIHIKO;KUSUMI MASATAKA |
分类号 |
H01L21/8247;H01L21/28;H01L21/316;H01L21/336;H01L27/115;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L29/76 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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