One aspect of the present invention relates to a method of forming spacers (56) in a SONOS type nonvolatile semiconductor memory device, involving providing a substrate (40) having a core region (42) and periphery region (44), the core region (42) containing SONOS type memory cells (48) and the periphery region (44) containing gate transistors (50); implanting a first implant into the core region (42) and a first implant into the perifery region (44) of the substrate (40); forming a spacer material (52) over the substrate (40); masking the core region (42) and forming spacers (56) adjacent the gate transistors (50) in the perifery region (44); and implanting a second implant into the perifery region (44) of the substrate (40).
申请公布号
WO03001601(A3)
申请公布日期
2003.03.13
申请号
WO2001US48825
申请日期
2001.12.14
申请人
ADVANCED MICRO DEVICES, INC.
发明人
RAMSBEY, MARK, T.;DERHACOBIAN, NARBEH;WANG, JANET;HUI, ANGELA;PHAM, TUAN;SUNKAVALLI, RAVI;RANDOLPH, MARK