| 摘要 |
<p>A collector region (13) is formed on a semiconductor substrate (1), a first insulation layer (31) having a first opening (51) is formed on the collector region, and a base semiconductor layer (14B) is formed in contact with the collector region through the first opening. The end rim of the base semiconductor layer is so formed as to extend onto the first insulation layer. An emitter semiconductor layer (14E) is formed in a predetermined region on the base semiconductor layer, a second insulation layer (32) is formed by coating the end rim on the base semiconductor layer, and a second opening (52) for opening the contact of an emitter semiconductor layer with the base semiconductor layer and a third opening (53) for opening the base lead of the base semiconductor layer is formed, and a metal silicide layer (15) is formed on the surface of the base semiconductor layer in the third opening. The method for forming the metal silicide layer in a semiconductor device having a bipolar transistor enables self-alignment and high matching of silicide in another semiconductor element.</p> |
