| 摘要 |
PURPOSE: A semiconductor laser diode and a fabricating method thereof are provided to simplify a fabrication process by form an Mg doped InGaP layer on an upper portion of an active layer. CONSTITUTION: An n-clad layer(52), an n-waveguide layer(53), an active layer(53), a p-waveguide layer(55), and an Mg doped InGaP layer(56) are sequentially on an upper portion of a substrate(51). A current restriction layer(57) is formed on an upper portion of the Mg doped InGaP layer. A channel is formed by performing a selective etching process using a mask of a predetermined pattern. A semiconductor laser diode is formed by electrodes(60) at an upper portion of the channel and a bottom portion of the substrate, respectively. The electrode is formed by depositing a metallic material.
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