Semiconductor laser device having selective absorption qualities over a wide temperature range

摘要

A semiconductor laser device having a semiconductor substrate, an active region formed on the semiconductor substrate and configured to radiate light having a predetermined wavelength range, a light reflecting facet and a light emitting facet positioned at opposing longitudinal ends of the active region to form a resonant cavity. A diffraction grating is positioned within the resonant cavity, and is configured to select a first portion of the radiated light for emitting from the semiconductor laser device, and an absorption region located in a vicinity of the active region and configured to selectively absorb a second portion of the radiated light, the first portion of the radiated light having a different wavelength than the second portion of the radiated light. The light emitting facet has a reflectivity value of aproximately in the range of 10%-30%.