发明名称 Light emitting device and manufacturing method thereof
摘要 An element structure is provided in which film formation irregularities and deterioration of an organic compound layer formed on an electrode are prevented in an active matrix light emitting device. After forming an insulating film so as to cover edge portions of a conductor which becomes a light emitting element electrode, polishing is performed using a CMP (chemical mechanical polishing) method in the present invention, thus forming a structure in which surfaces of a first electrode and a leveled insulating layer are coplanar. The film formation irregularities in the organic compound layer formed on the electrode can thus be prevented, and electric field concentration from the edge portions of the electrode can be prevented.
申请公布号 US2003047730(A1) 申请公布日期 2003.03.13
申请号 US20020238218 申请日期 2002.09.10
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KONUMA TOSHIMITSU
分类号 H05B33/10;G09F9/00;G09F9/30;H01L21/3105;H01L21/321;H01L21/336;H01L27/32;H01L29/786;H01L51/00;H01L51/30;H01L51/50;H01L51/52;H05B33/22;H05B33/28;(IPC1-7):H01L29/18 主分类号 H05B33/10
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