| 摘要 |
The invention relates to an integrated tunable capacitor in which the quality is improved by virtue of the fact that, in lieu of source/drain regions, highly doped trough connection regions (6) of a large depth are provided that are configured, for example, as collector deep implantation regions. This results in reducing the series resistance of the tunable capacitor. The integrated tunable capacitor can be used, for example, in integrated voltage-controlled oscillator circuits in which a high quality is demanded. |
