| 发明名称 |
DEPOSITION METHOD, DEPOSITION APPARATUS, INSULATING FILM AND SEMICONDUCTOR INTEGRATED CIRCUIT |
| 摘要 |
A deposition method and a deposition apparatus for depositing a boron carbon nitrogen film. A boron carbon nitride film (61) is deposited over a substrate (60) by generating a plasma (50) in a cylindrical enclosure (1), exciting mainly nitrogen atoms in the cylindrical enclosure (1), and then causing them to react with boron and carbon.
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| 申请公布号 |
WO02080260(A9) |
申请公布日期 |
2003.03.13 |
| 申请号 |
WO2002JP02837 |
申请日期 |
2002.03.25 |
| 申请人 |
KABUSHIKI KAISHA WATANABE SHOKO;SUGINO, TAKASHI;KUSUHARA, MASAKI;UMEDA, MASARU |
发明人 |
SUGINO, TAKASHI;KUSUHARA, MASAKI;UMEDA, MASARU |
| 分类号 |
C23C16/38;C23C16/36;C23C16/452;C23C16/509;H01L21/31;H01L21/314;H01L21/318;H01L21/768;H01L23/522;(IPC1-7):H01L21/318 |
主分类号 |
C23C16/38 |
| 代理机构 |
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