发明名称 HIGH Q FACTOR MEMS RESONATORS
摘要 Microelectromechanical resonators 102 that can be fabricated on a semiconductor die by processes normally used in fabricating microelectronics e.g., CMOS circuits are provided. The resonators comprises at least two vibratable members 112, 114 that are closely spaced relative to a wavelength associated with their vibrating frequency, and driven to vibrate one-half a vibration period out of phase with each other, i.e. to mirror each others motion. Driving the vibratable members as stated leads to destructive interference effects that suppress leakage of acoustic energy from the vibratable members into the die, and improve the Q-factor of the resonator. Vibratable members in the form of vibratable plates that are formed by deep anisotropic etching one or more trenches 110, 112, 114 in the die are disclosed. Embodiments in which two sets of vibratable plates are spaced by 1 the aforementioned wavelength to further suppress acoustic energy leakage, and improve the Q-factor of the resonator are disclosed.
申请公布号 WO03021634(A2) 申请公布日期 2003.03.13
申请号 WO2002US25866 申请日期 2002.08.14
申请人 MOTOROLA, INC. 发明人 NIU, FENG;CORNETT, KENNETH, D.
分类号 H03H9/02;H03H9/24 主分类号 H03H9/02
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