| 摘要 |
<p>A production method for an anneal wafer comprising the step of subjecting a silicon single-crystal wafer fabricated by a Czochralski (CZ) method to a high-temperature annealing under an atmosphere of argon gas, hydrogen gas or a mixture of these gases at 1100-1350°C for 10-600 min, characterized in that, during the annealing, the silicon single-crystal wafer is supported by a support jig only in a region at least 5 mm away from the outer peripheral edge of the wafer toward the center of the wafer, and pre-annealing is performed, before the high-temperature annealing, at temperatures lower than the high-temperature annealing temperature to grow oxygen deposits. Accordingly, it is possible to provide a production method for an anneal wafer and an anneal wafer capable of restricting slip dislocation occurring at the high-temperature annealing even if a silicon single-crystal wafer having a diameter as large as at least 300 mm is used.</p> |
