发明名称 |
Peeling method and method of manufacturing semiconductor device |
摘要 |
There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
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申请公布号 |
US2003047280(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020218042 |
申请日期 |
2002.08.14 |
申请人 |
TAKAYAMA TORU;MARUYAMA JUNYA;YAMAZAKI SHUNPEI |
发明人 |
TAKAYAMA TORU;MARUYAMA JUNYA;YAMAZAKI SHUNPEI |
分类号 |
G02F1/1333;B32B7/06;B32B43/00;H01L21/02;H01L21/20;H01L21/322;H01L21/336;H01L21/762;H01L21/77;H01L21/84;H01L27/12;H01L27/32;H01L29/786;H01L51/50;H01L51/52;H05B33/10;(IPC1-7):B32B1/00 |
主分类号 |
G02F1/1333 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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