| 摘要 |
The invention relates to an integrated CMOS circuit comprising, in a semiconductor substrate (1) with a first type of conductivity, a casing (2) of a second type of retrograde-doped conductivity, the end of said casing being covered by an inter-casing insulating region (4). The components contained in said casing are separated from each other by means of intra-casing insulating regions (6,7). The first insulating elements (15) of the second type of high-level doping conductivity extend under each intra-casing insulating region. A second region (21) of the second type of high-level doping conductivity partially extends under the inter-casing insulator beyond the periphery of each casing. |
