发明名称 |
Low temperature gate stack |
摘要 |
The present invention relates to methods for forming dielectric layers on a substrate, such as in an integrated circuit. In one aspect of the invention, a thin interfacial layer is formed. The interfacial layer is preferably an oxide layer and a high-k material is preferably deposited on the interfacial layer by a process that does not cause substantial further growth of the interfacial layer. For example, water vapor may be used as an oxidant source during high-k deposition at less than or equal to about 300° C.
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申请公布号 |
US2003049942(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020227475 |
申请日期 |
2002.08.22 |
申请人 |
HAUKKA SUVI;SHERO ERIC;POMAREDE CHRISTOPHE;HUB MAES JAN WILLEM;TUOMINEN MARKO |
发明人 |
HAUKKA SUVI;SHERO ERIC;POMAREDE CHRISTOPHE;HUB MAES JAN WILLEM;TUOMINEN MARKO |
分类号 |
C23C16/40;H01L21/28;H01L21/306;H01L21/314;H01L21/316;H01L29/51;H01L29/78;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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