发明名称 Method for cutting ingots for use with a wire cutting apparatus
摘要 There is provided a process for significantly reducing thickness variations and the deviations of the wafer's centerline from a reference plane in material cut with wire saws in a wire cutting apparatus by utilizing a sacrificial layer. The sacrificial layer prevents excessive kerf loss in slices or wafers at the wire entry and exit points. The process can be used to produce semiconductor wafers having greater uniformity in thickness.
申请公布号 US2003047177(A1) 申请公布日期 2003.03.13
申请号 US20010950340 申请日期 2001.09.11
申请人 CHRIST MICHAEL;WARD IRL E. 发明人 CHRIST MICHAEL;WARD IRL E.
分类号 B28D5/04;(IPC1-7):B28D1/02;B28D1/08 主分类号 B28D5/04
代理机构 代理人
主权项
地址