Method of manufacturing compound single crystal

摘要

To provide a method of manufacturing compound semiconductor single crystals such as silicon carbide and gallium nitride by epitaxial growth methods, that is capable of yielding compound single crystals of comparatively low planar defect density. The method of manufacturing compound single crystals in which two or more compound single crystalline layers identical to or differing from a single crystalline substrate are sequentially epitaxially grown on the surface of said substrate. At least a portion of said substrate surface has plural undulations extending in a single direction and second and subsequent epitaxial growth is conducted after the formation of plural undulations extending in a single direction in at least a portion of the surface of the compound single crystalline layer formed proximately.