| 发明名称 |
Avalanche photodiodes with an impact-ionization-engineered multiplication region |
| 摘要 |
An avalanche photodiode including a multiplication layer is provided. The multiplication layer may include a well region and a barrier region. The well region may include a material having a higher carrier ionization probability than a material used to form the barrier region.
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| 申请公布号 |
US2003047752(A1) |
申请公布日期 |
2003.03.13 |
| 申请号 |
US20010969133 |
申请日期 |
2001.10.01 |
| 申请人 |
CAMPBELL JOE C.;YUAN PING |
发明人 |
CAMPBELL JOE C.;YUAN PING |
| 分类号 |
H01L21/00;H01L31/0328;H01L31/107;H01L31/109;H01L31/18;(IPC1-7):H01L21/00;H01L31/032 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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