发明名称 High-density inter-die interconnect structure
摘要 An interconnect architecture for connecting a plurality of closely-spaced electrical elements on a first integrated circuit fabricated structure with operative circuits on a second integrated circuit fabricated structure. In one embodiment, the first integrated circuit fabricated structure comprises a plurality of photo sensors. Conductive interconnect elements on the first integrated circuit fabricated structure provide electrical connection between individual photo sensors and the operative circuitry on the second integrated circuit fabricated structure.
申请公布号 US2003049925(A1) 申请公布日期 2003.03.13
申请号 US20010950387 申请日期 2001.09.10
申请人 LAYMAN PAUL ARTHUR;MCMACKEN JOHN RUSSELL 发明人 LAYMAN PAUL ARTHUR;MCMACKEN JOHN RUSSELL
分类号 H01L25/18;H01L21/60;H01L25/065;H01L25/07;H01L27/146;(IPC1-7):H01L21/44;H01L21/76 主分类号 H01L25/18
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