| 摘要 |
<p>A thin film capacitor (2) comprising, sequentially formed on a substrate (4), a lower electrode (6), a dielectric thin film (8) and an upper electrode (10). The dielectric thin film (8) consists of a thin-film capacity element-use composition that has a bismuth layer-form compound having its c-axis oriented vertically to the substrate surface, and the bismuth layer-form compound is expressed by a composition formula: (Bi2O2)2+(Am-1BmO3m+1)2-, or Bi2Am-1BmO3m+3 where a symbol m in the formula is an odd number, symbol A at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and symbol B at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V. Mo and W. The capacitor, even if it is thinned, is comparatively high in permittivity and low in loss, excellent in leak characteristics, improved in withstand voltage, and excellent in temperature characteristics of permittivity and surface smoothness.</p> |
