发明名称 CHEMICAL SURFACE DEPOSITION OF ULTRA-THIN SEMICONDUCTORS
摘要 <p>A chemical surface deposition process for forming an ultra-thin semiconducting film of Group IIB-VIA compounds onto a substrate. This process eliminates particulates formed by homogeneous reactions in bath, dramatically increases the utilization of Group IIB species, and results in the formation of a dense, adherent film for thin film solar cells. The process involves applying a pre-mixed liquid coating composition containing Group IIB and Group VIA ionic species onto a preheated substrate. Heat from the substrate causes a heterogeneous reaction between the Group IIB and VIA ionic species of the liquid coating composition, thus forming a solid reaction product film on the substrate surface.</p>
申请公布号 WO2003021648(A1) 申请公布日期 2003.03.13
申请号 US2002025862 申请日期 2002.08.14
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