Production of electronic switching, comprises etching trench regions in the substrate, filling with polysilicon and silicon dioxide, etching, coating to form a planar surface, depositing a gate-conducting layer-filling region and etching

摘要

Production of electronic switching units on a substrate (100) comprises etching trench regions (104) in the substrate; filling with polysilicon and silicon dioxide to form storage cell capacities; etching the substrate with the storage cell capacities to expose regions above the capacities; coating the whole substrate surface to form a planar surface; depositing a gate-conducting layer-filling region (105) over the whole substrate surface; and etching the region to expose an active region (102) and a gate-conducting filling hole (103). Preferred Features: The trench regions of storage cells have a structure which corresponds to a regular pattern in on or two spatial directions in the plane of the substrate. The trench regions have a depth of 7-8 mu m.