Semiconductor memory device having a plurality of signal lines for writing and reading data

摘要

A write-driver/read-amplifier circuit includes a write driver, a GIO equalize circuit and a read amplifier. When a current leaks from or to global data line, a signal applied to a logic gate attains L-level. As a result, the write driver and the GIO equalize circuit stop the operations so that a semiconductor memory device can prevent occurrence of an unnecessary leak current.