| 发明名称 |
THICK SINGLE CRYSTAL DIAMOND LAYER METHOD FOR MAKING IT AND GEMSTONES PRODUCED FROM THE LAYER |
| 摘要 |
A layer of single crystal CVD diamond of high quality having a thickness greater than 2 mm. Also provided is a method of producing such a CVD diamond layer. The method involves the homoepitaxial growth of the diamond layer on a low defect density substrate in an atmosphere containing less than 300ppb nitrogen. Gemstones can be manufactured from the layer. |
| 申请公布号 |
EP1290251(A1) |
申请公布日期 |
2003.03.12 |
| 申请号 |
EP20010943715 |
申请日期 |
2001.06.14 |
| 申请人 |
ELEMENT SIX (PTY) LTD |
发明人 |
SCARSBROOK, GEOFFREY ALAN;MARTINEAU, PHILIP MAURICE;DORN, BAERBEL SUSANNE CHARLOTTE;COOPER, ANDREW MICHAEL;COLLINS, JOHN LLOYD;WHITEHEAD, ANDREW JOHN;TWITCHEN, DANIEL JAMES |
| 分类号 |
A44C17/00;C23C16/27;C30B25/02;C30B25/10;C30B25/18;C30B29/04;H01L21/205;H01L21/3065;(IPC1-7):C30B25/02;C30B33/00;C30B25/20 |
主分类号 |
A44C17/00 |
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