METHOD FOR REMOVING COP OF SINGLE CRYSTALLINE SILICON WAFER

摘要

PURPOSE: A method for removing a COP(Crystal Originated Particle) of a single crystalline silicon wafer is provided to remove COP from a surface of a wafer to a deep part of the wafer by performing a rapid thermal process. CONSTITUTION: A single crystalline silicon wafer is loaded into a process chamber of atmosphere including one selected from inert gas, hydrogen, nitrogen, and NH3. The first rapid thermal process for the single crystalline silicon wafer is performed under a temperature of 1100 to 1300 degrees centigrade during 1 to 60 seconds(S100). The single crystalline silicon wafer is cooled under a temperature of 700 to 900 degrees centigrade during 1 to 60 seconds(S200). The second rapid thermal process for the single crystalline silicon wafer is performed under a temperature of 1100 to 1300 degrees centigrade during 1 to 60 seconds(S300).