METHOD FOR FABRICATING SILICIDE LAYER OF FLAT CELL MEMORY DEVICE

摘要

PURPOSE: A method for fabricating a silicide layer of a flat cell memory device is provided to reduce a number of fabrication processes by forming simultaneously mask patterns for defining STI(Shallow Trench Isolation) and a BN+(Buried N+ channel) diffusion layer. CONSTITUTION: An isolation layer and a BN+ diffusion layer are formed by performing simultaneously an isolation process and a BN+ diffusion layer forming process(S100). A well is formed by performing an ion implantation process(S102). A gate oxide layer is formed by performing a predetermined process(S104). A gate electrode is formed by performing a predetermined process(S106). Cells are divided by performing the ion implantation process(S108). A source/drain ion implantation process is performed(S110).